By Michael A. Lieberman, Alan J. Lichtenberg
During this moment variation of a piece for graduate scholars and researchers in plasma processing, Lieberman and Lichtenberg, either professors of electric engineering on the collage of California-Berkeley, upload new and revised fabric to mirror advancements within the box and to explain the presentation of easy rules. They conceal basics of plasma physics and chemistry, and practice simple idea to plasma discharges. New and multiplied themes during this variation contain normal Bohm standards, pulsed energy discharges, and helicon discharges.
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Sample text
3. Plasma etching in integrated circuit manufacture: (a) example of isotropic etch; (b) sidewall etching of the resist mask leads to a loss of anisotropy in film etch; (c) illustrating the role of bombarding ions in anisotropic etch; (d ) illustrating the role of sidewall passivating films in anisotropic etch. wet etches have been developed having essentially infinite selectivity, highly selective plasma etch processes are not easily designed. 3b. 2e. Assuming that filmto-substrate selectivity is a critical issue, one might imagine simply turning off the plasma after the film has been etched through.
2 shows a PIC simulation time history over 10210 s of (a) the vx –x phase space, (b) the number N of sheets versus time, and (c) the potential F versus x for 100 unneutralized ion sheets (with e/M for argon ions). We see the ion acceleration in (a), the loss of ions in (b), and the parabolic potential profile in (c); the maximum potential decreases as ions are lost from the system. 4. 2. PIC simulation of ion loss in a plasma containing ions only: (a) vx – x ion phase space, showing the ion acceleration trajectories; (b) number N of ion sheets versus t, with the steps indicating the loss of a single sheet; (c) the potential F versus x during the first 10210 s of ion loss.
Dusty plasmas are described in Chapter 17. 4. In time sequence, this shows first, the equilibrium chemical etch rate of silicon in the XeF2 etchant gas; next, the tenfold increase in etch rate with the addition of argon ion bombardment of the substrate, simulating plasma-assisted etching; and finally, the very low “etch rate” due to the physical sputtering of silicon by the ion bombardment alone. A more recent application is the use of plasma-immersion ion implantation (PIII) to implant ions into materials at dose rates that are tens to hundreds of times larger than those achievable with conventional (beam based) ion implantation systems.