Download Thin Films and Heterostructures for Oxide Electronics by Satishchandra B. Ogale PDF

By Satishchandra B. Ogale

Oxides shape a huge topic zone of study and expertise improvement which encompasses assorted disciplines comparable to fabrics technology, sturdy kingdom chemistry, physics and so forth. the actual box of oxide electronics, that's the subject material of this ebook, extra embodies the purpose of this ebook is to illustrate the interaction of those fields and to supply an introduciton to the options and methodologies concerning movie development, characterization and gadget processing. The literature during this box is therefore really scattered in numerous examine journals protecting one or the opposite element of the categorical task. this example demands a e-book that may consolidate this data and hence allow a newbie in addition to a professional to get an total point of view of the sphere, its foundations, and its projected growth.

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Phys. Lett. 77, 3275 (2000) C. S. Ganpule, V. Nagarajan, B. K. Hill, A. L. Roytburd, E. D. Williams, R. Ramesh, S. P. Alpay, A. Roelofs, R. Waser, and L. M. Eng, J. Appl. Phys. 91, 1477 (2002) A. Gruverman and M. Tanaka, J. Appl. Phys. 89, 1836 (2001) J. Kakilios, R. A. Street, and W. B. Jackson, Phys. Rev. Lett. 59, 1037 (1987); R. G. Palmer, D. L. Stein, E. Abrahams, and P. W. Anderson, ibid 53, 958 (1984); R. V. Chamberlin, G. Mozurkewich, and R. Orbach, ibid 52, 867 (1984); D. K. Lottis, R.

Van Suchtelen, Philips Res. Rep. 27, 28 (1972). K. Lefki, G. J. M. Dormans, J. Appl. Phys. 76, 1764 (1994). H. Zheng, J. Wang, S. E. Lofland, Z. Ma, L. Mohaddes-Ardabili, T. Zhao, L. Salamanca-Riba, S. R. Shinde, S. B. Ogale, F. Bai, D. Viehland, Y. Jia, D. G. Schlom, M. Wuttig, A. Roytburd, and R. Ramesh, Science 303, 661 (2004). 29 H. Zheng, J. Wang, L. Mohaddes-Ardabili, D. G. Schlom, M. Wuttig, L. SalamancaRiba, R. Ramesh, Appl. Phys. Lett. 85, 2035 (2004). G. A. H. Haeni,'" J. H. M. Held,^ S.

Ogale, F. Bai, D. Viehland, Y. Jia, D. G. Schlom, M. Wuttig, A. Roytburd, and R. Ramesh, Science 303, 661 (2004). 29 H. Zheng, J. Wang, L. Mohaddes-Ardabili, D. G. Schlom, M. Wuttig, L. SalamancaRiba, R. Ramesh, Appl. Phys. Lett. 85, 2035 (2004). G. A. H. Haeni,'" J. H. M. Held,^ S. J. A. 9), (2) to be stable in contact with silicon (capable of withstanding a -900 °C annealing step)^, (3) to have a bandgap high enough (4-5 eV) to provide sufficiently low gate leakage, (4) to have a low density of electricallyactive defects at the dielectric / silicon interface (At)?

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