Download Ultra-Low Power Wireless Technologies for Sensor Networks by Martin E. Fermann, Almantas Galvanauskas, Gregg Sucha PDF

By Martin E. Fermann, Almantas Galvanauskas, Gregg Sucha

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It is important to note that the finite Q of the CMOS device and pad capacitance must be taken into account, as they also reduce the loaded Q of the oscillator. This optimization led to a maximized value of RL at parallel resonance. The desired voltage swing of the oscillator was 100mV zero-peak. The equation V0 = I1 RL relates the desired voltage swing to the first harmonic component of the drain current of M1 . Thus, since the oscillator is operated in the current-limited regime, the necessary oscillator core bias current is 300µA.

A prototype would allow the refinement of the unresolved resonator/CMOS packaging and interconnect problem. This circuit, when used as a local oscillator, would also provide a steppingstone to the implementation of an entire low power transceiver. This section describes the state-of-the-art in transceiver local oscillator design. Used to generate the transmitted carrier frequency and the local oscillator (LO) signal, a stable, low-noise RF sinusoid generator is crucial for the performance of an RF link.

43GHz as expected. The oscillator exhibited a clean Fig. 16. ISM differential oscillator transient output spectrum and good amplitude matching. The phase-noise of the oscillator was measured with an Agilent E5052A Signal Source Analyzer over four bias point settings (400µA, 500µA, 600µA, 700µA). 17. As expected, the close-in phase noise and noise floor decrease as the oscillator loop power increases. At a bias current of 400µA, the oscillator exhibits a phase noise of approximately −113 dBc Hz at 100kHz offset.

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